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Optical properties of Si nanowires on a Si {111} surface

Published online by Cambridge University Press:  10 February 2011

N. Ozaki ,
Y. Ohno  and
S. Takeda
N. Ozaki
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16, Machikane-yama, Toyonaka, Osaka 560–0043, Japan
Y. Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16, Machikane-yama, Toyonaka, Osaka 560–0043, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16, Machikane-yama, Toyonaka, Osaka 560–0043, Japan
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Abstract

We have investigated optical properties of straight silicon nanowires by means of in-situ cathodoluminescence spectroscopy in a transmission electron microscope. The nanowires, grown on a Si{111} surface via vapor-liquid-solid growth mechanism, have no structural defects such as kink, and the diameter and growth direction are controlled by varying the growth conditions. We have found that the nanowires emit intense light. These lines have not been observed in other kinds of Si nanostructures such as porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 99
Copyright
Copyright © Materials Research Society 2000

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References

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