Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-02-08T12:55:46.281Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

Published online by Cambridge University Press:  21 February 2011

A. M. Ali ,
T. Inokuma ,
Y. Kurata  and
S. Hasegawa
A. M. Ali
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
T. Inokuma
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
Y. Kurata
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
S. Hasegawa
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
Get access

Absrtact

Nanocrystalline silicon (nc-Si) films were deposited on fused quartz and single (100) crystal Si substrates by plasma-enhanced chemical vapor deposition from a SiH4-H2 mixture at various deposition temperatures, Tδ. The effects of plasma-assisted hydrogenation at 300°C on the optical and structural properties were examined for the nc-Si films. The film deposited at Tδ = 730°C exhibits photoluminescence (PL) in its as-deposited state, but the intensity of PL decreases after hydrogenation. We find that a correlation between the PL intensity and infrared absorption bands at around 850 and 1000 cm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 565
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Schuppler, S., Friedman, S. L., Marcus, M. A., Adler, D. L., Xie, Y. H., Ross, F. M., Chabal, Y. J., Harris, T. D., Brus, L. E., Brown, W. L., Chaban, E. E., Szajowski, P. F., Christman, S. B. and Citrin, P. H., Phys. Rev. B 52, 4910 (1995).Google Scholar
3. Wilson, W. L., Szajowski, P. F. and Brus, L. E., Science 262, 1242 (1993).Google Scholar
4. Dinh, L. N., Chase, L. L., Balooch, M., Siekhaus, W. J., and Wooten, F., Phys. Rev. B. 54, 5029 (1996).Google Scholar
5. Vasquez, R. P., Fathauer, R. W., George, T., Ksendzow, A. and Lin, T. L., Appl. Phys. Lett. 60, 1004 (1992).Google Scholar
6. George, T., Anderson, M.S., Pike, W. T., Lin, T. L., Fathauer, R. W., Jung, K. H. and Wong, D. L., Appl. Phys. Lett. 60, 2359 (1992).Google Scholar
7. Tse, J. S., Dahn, J. R. and Buda, F., J. Phys. Chem. 99, 1896 (1995).Google Scholar
8. Brandt, M. S., Fuchs, H. D., Stuzmann, M., Weber, J. and Cardona, M., Solid State Commun. 81, 302 (1992).Google Scholar
9. Prokes, S. M., Glembocki, O. J., Bermudez, V. M., Kaplan, R., Friedersdorf, L. E. and Searson, P. C., Phys. Rev. B 45, 13788 (1992).Google Scholar
10. Li, K. H., Tsai, C., Sarathy, J. and Campbell, J. C., Appl. Phys. Lett. 62, 3192 (1993).Google Scholar
11. Morisaki, H., Hashimoto, H., Ping, F. W., Nozawa, H. and Ono, H., Appl. Phys. Lett. 27, 2977 (1933).Google Scholar
12. Prokes, S. M. and Carlos, W. E., J. Appl. Phys. 78, 2671 (1995).Google Scholar
13. Prokes, S. M. and Glemocki, O. J., Phys. Rev. B 49, 2238 (1994).Google Scholar
14. Godet, C., Layadi, N. and Cabarrocas, P. Roca i, Appl. Phys. Lett. 66, 3146 (1995).Google Scholar
15. Goda, C., Marchon, B. and Schhimdt, M., Thin Solid Films 155, 227 (1987).Google Scholar
16. Hasegawa, S., Sakata, M., Inokuma, T. and Kurata, Y., J. Appl. Phys. 84, 584 (1998).Google Scholar
17. Hasegawa, S., Sakata, M., Inokuma, T. and Kurata, Y., J. Appl. Phys. 85, 3844 (1999).Google Scholar
18. Cullity, B. D.: Element of X-ray Diffraction (Addison-Wesley, Reading, 1978) 2nd ed., p. 102.Google Scholar
19. Tsu, R., Gonzales-Hernandez, G., Chao, S. S., Lee, S. C. and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
20. Stoney, G. G., Proc. R. Soc. London Ser. A 82, 172 (1909).Google Scholar
21. Syed, M., Inokuma, T., Kurata, Y. and Hasegawa, S., Jpn. J. Appl. Phys. 36, 6625 (1997).Google Scholar