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Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

Published online by Cambridge University Press:  15 February 2011

Toshimichi Ito ,
Toshimichi Ohta ,
Osamu Arakaki  and
Akio Hiraki
Toshimichi Ito
Affiliation:
Osaka University, Dept. of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Toshimichi Ohta
Affiliation:
Osaka University, Dept. of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Osamu Arakaki
Affiliation:
Osaka University, Dept. of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Akio Hiraki
Affiliation:
Osaka University, Dept. of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
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Abstract

Microcrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 127
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Canham, L.T., Appl.Phys.Lett., 57, 1046(1990).Google Scholar
2. Unagami, T. and Seki, M.: J.Electrochem.Soc., 125, 1339(1978).CrossRefGoogle Scholar
3. Oules, C., Halimaoui, A., Regolni, J.L., Herino, R., Perio, A., Bensahel, D. and Bomchil, G., Mater.Sci.Eng., B4, 435(1989).CrossRefGoogle Scholar
4. T.L.Lin,. Chen, S.C., Kao, Y.C. and Wang, K.L., Appl.Phys.Lett., 48,1793 (1986).Google Scholar
5. Yasumatsu, T., Ito, T., Nishizawa, H. and Hiraki, A., Appl.Surf.Sci., 48/49, 414(1991).Google Scholar
6. Lehmann, V. and Gosele, U., Appl.Phys.Lett., 58, 856(1991).Google Scholar
7. Ito, T., Kato, Y. and Hiraki, A., in The Structure of Surfaces II, (Springer, Amsterdam, 1988) pp. 378.CrossRefGoogle Scholar
8. Ito, T., Yasumatsu, T., Watabe, H. and Hiraki, A., Jpn.J.Appl.Phys., 29, L201 (1990).Google Scholar
9. Kato, Y., Ito, T. and Hiraki, A., Jpn.J.Appl.Phys., 27, L1406(1988).Google Scholar
10. Ito, T., Kiyama, H., Yasumatsu, T., Watabe, H. and HT-raki, A., Physica B, 170, 535(1991).Google Scholar
11. Dimaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L. Theis, T.N. and Cutro, J.A., J.Appl.Phys., 56, 4016(1984).Google Scholar
12. Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., lHerino, R., Ligeon, M. and Muller, F., Appl.Phys.Lett., 59, 304(1991).CrossRefGoogle Scholar
13. Furukawa, S. and Mijasato, T., Phys.Rev., B38, 5726(1988).Google Scholar
14. Ito, T., Ohta, T. and Hiraki, A., Jpn.J.Appl.Pfiys., 1992 (in press).Google Scholar
15. Arakaki, O., Ohta, T., Ito, T. and Hiraki, A. (to be published).Google Scholar