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Optical Degradation and Morphology in a-Si:H

Published online by Cambridge University Press:  25 February 2011

Jun-ichi Nakata ,
Atsushi Miyanishi ,
Junji Shirafuji ,
Shozo Imao ,
Keiji Fujibayashi  and
Yoshio Inuishi
Jun-ichi Nakata
Affiliation:
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University, Kowakae, Higashiosaka, Osaka 577, Japan
Atsushi Miyanishi
Affiliation:
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University, Kowakae, Higashiosaka, Osaka 577, Japan
Junji Shirafuji
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
Shozo Imao
Affiliation:
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University, Kowakae, Higashiosaka, Osaka 577, Japan
Keiji Fujibayashi
Affiliation:
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University, Kowakae, Higashiosaka, Osaka 577, Japan
Yoshio Inuishi
Affiliation:
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University, Kowakae, Higashiosaka, Osaka 577, Japan
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Abstract

The relationship between the optical degradation and the morphology of hydrogenated amorphous silicon (a-Si:H) films was studied through the analysis of the annealing processes. The annealing of optically induced metastable dangling bonds can be explained in terms of the first and the second order reactions with dispersive hydrogen diffusion for the films deposited at lower and higher temperature, respectively. The activation energy of the annealing was estimated to be 0.8 eV with a small distribution in both cases. Optically enhanced annealing was first observed. It was found by DLTS and CT measurements that the density of hole trap located at Ev+0.6 eV was remarkably decreased by the light soaking, accompanied by the simultaneous increase of electron trap at Ec-0.7 ∼ Ec-0.9 eV due to the dangling bonds. These experimental facts support the view that the hole trap corresponds to the weak bonds, which convert to the metastable dangling bonds by light soaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 607
Copyright
Copyright © Materials Research Society 1989

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References

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