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Optical Characterization of SiC Wafers

Published online by Cambridge University Press:  10 February 2011

J. C. Burton ,
M. Pophristic ,
F. H. Long  and
I. Ferguson
J. C. Burton
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, frhlong@arutchem.rutgers.edu
M. Pophristic
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, frhlong@arutchem.rutgers.edu
F. H. Long
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, frhlong@arutchem.rutgers.edu
I. Ferguson
Affiliation:
EMCORE Corp., Somerset, NJ 08873
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Abstract

Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. We have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. We have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. We also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 201
Copyright
Copyright © Materials Research Society 1999

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References

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