Hostname: page-component-7f64f4797f-vhqbp Total loading time: 0 Render date: 2025-11-09T16:45:51.103Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Characteristics of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

M. A. Tischler ,
R. T. Collins ,
J. C. Tsang ,
J. H. Stathis ,
J. L. Batstone  and
S. Zollner
M. A. Tischler
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
R. T. Collins
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
J. C. Tsang
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
J. H. Stathis
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
J. L. Batstone
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
S. Zollner
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA
Get access

Abstract

The luminescent characteristics of porous silicon are affected by the preparation conditions as well as subsequent treatment. Oxidation, which easily occurs in ambient conditions under illumination, greatly reduces the luminescence efficiency. Vertical inhomogeneity, which is inherent from the preparation procedure, can complicate interpretation of results, especially following treatments which non-uniformly affect the porous material. These results point out the need to pay careful attention to the sample's structure and history, as well as the necessity of controlling this degradation in order to realize practical luminescent devices.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 189
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Canham, L.T., Apph Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
2. Bsiesy, A., Vial, J.C., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R., Wasiela, A., Halimaoui, A. and Bomchil, G., Surf. Sci. 254, 195 (1991).CrossRefGoogle Scholar
3. Tisehler, M.A., Collins, R.T., Stathis, J.H. and Tsang, J.C., Appl. Phys. Lett.Google Scholar
4. Tsang, J.C., Tischler, M.A. and Collins, R.T., to be published.Google Scholar
5. Robinson, M.B. et. al, Glembocki, O.J. et al., Khan, B.A. et al, this proceedings.Google Scholar
6. DiMaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L., Theis, T.N., Cutro, J.A. and Brorson, S.D., J. Appl. Phys. 56, 401 (1984).CrossRefGoogle Scholar
7. Wolford, D.J., Reimer, J.A. and Scott, B.A., Appl. Phys. Lett. 42, 369 (1983).Google Scholar
8. Heath, J.R., Batstone, J.L. and Jasinski, J.M., this proceedings.Google Scholar
9. Furukawa, S. and Matsumoto, N., Phys. Rev. B 31, 2114 (1985).Google Scholar
10. Weber, J., Brandt, M.S., Fuchs, H.D. and Stutzmann, M., this proceedings.Google Scholar