Published online by Cambridge University Press: 25 February 2011
We present scanning tunneling microscopy images and atomic models for a variety of GaAs(100) reconstructed surfaces. For homoepitaxial material we show the sequence of phases from c(4×4) through c(8×2) as the As surface concentration is reduced. For the heteroepitaxial GaAs/Si(100) growth we show the first two stages of film development, namely, Si(100):As-(1×2) monolayer coverage followed by adsorption of a submonolayer of Ga dimers. The next stages of film development are discussed.