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One-Step Silicon Nitride Passivation by ECR-CVD for Heterostructure Transistors and MIS Devices

Published online by Cambridge University Press:  10 February 2011

J. A. Diniz ,
L. E. M. de Barros Jr ,
R. T. Yoshioka ,
G. S. Lujan ,
I. Danilov  and
J. W. Swart
J. A. Diniz
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
L. E. M. de Barros Jr
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
R. T. Yoshioka
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
G. S. Lujan
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
I. Danilov
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
J. W. Swart
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
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Abstract

Silicon nitride (SiNx) films with extremely low interface charge densities have been developed by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) deposition on GaAs substrates. The procedure is a one-step process and does not involve H2 and/or N2 pre-treatment of the sample surface. Characterization by Fourier transform infrared (FTIR) and ellipsometry analysis indicate good properties of the film revealing N-H and Si-N bonds. Results of capacitance-voltage (C–V) measurements show surface charge densities on the order of 5 × 1010 cm−2, which we believe is the lowest surface charge density achieved so far over GaAs.

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References

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