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One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

Published online by Cambridge University Press:  31 January 2011

Noelle Gogneau ,
Luc Le Gratiet ,
Richard Hostein ,
Bruno Fain ,
Ludovic Largeau ,
Gilles Patriarche ,
Gregoire Beaudoin ,
David Elvira ,
Alexios Beveratos  and
Isabelle Robert
...Show all authors
Noelle Gogneau
Affiliation:
noelle.gogneau@lpn.cnrs.fr
Luc Le Gratiet
Affiliation:
Luc.LeGratiet@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Richard Hostein
Affiliation:
richard.hostein@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Bruno Fain
Affiliation:
bruno.fain@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Ludovic Largeau
Affiliation:
Ludovic.Largeau@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Gilles Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, United States
Gregoire Beaudoin
Affiliation:
Gregoire.Beaudoin@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
David Elvira
Affiliation:
david.elvira@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Alexios Beveratos
Affiliation:
alexios.beveratos@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Isabelle Robert
Affiliation:
isabelle.robert@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
Isabelle Sagnes
Affiliation:
Isabelle.Sagnes@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures - CNRS-UPR20, marcoussis, France
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Abstract

We demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

Keywords

epitaxynanostructureIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1228: Symposium KK – Nanoscale Pattern Formation , 2009 , 1228-KK12-07
Copyright
Copyright © Materials Research Society 2010

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