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On the Origin of Light Emission in GaNxP1-x

Published online by Cambridge University Press:  01 February 2011

I. A. Buyanova ,
G. Yu. Rudko ,
W. M. Chen ,
H. P. Xin  and
C. W. Tu
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
G. Yu. Rudko
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
H. P. Xin
Affiliation:
Department of Electrical and Computer Engineering University of California, La Jolla, CA 92093-0407, USA
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering University of California, La Jolla, CA 92093-0407, USA
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Abstract

Temperature dependent photoluminescence (PL) and absorption measurements are employed to clarify mechanism for light emission in GaNP alloys with low (< 4.1) nitrogen content. The PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent red shift of the PL maximum position. On the other hand, band-to-band recombination in the alloy remains predominantly non-radiative presumably due to the presence of a large number of competing recombination channels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K4.2
Copyright
Copyright © Materials Research Society 2002

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References

1. Baillargeon, J. N., Cheng, K.Y., Hofelr, G. E., Pearah, P. J. and Hsieh, K. C., Appl. Phys. Lett. 60, 2540 (1992)Google Scholar
2. Sakai, S., Uera, Y. and Terauchi, Y., Jap. J. Appl. Phys. 32, 4413 (1993)Google Scholar
3. Miyoshi, S. and Onabe, K., Solid State Electronics 41, 267 (1997)Google Scholar
4. Bellaiche, L., Wei, S.H., and Zunger, A., Phys. Rev. B 56, 10 233 (1997).Google Scholar
5. Shan, W., Walukiewicz, W., Yu, K. M., Wu, J., Ager, J. W. III, Haller, E. E., Xin, H. P., and Tu, C. W., Appl. Phys. Lett. 76, 3251 (2000)Google Scholar
6. Xin, H. P., Tu, C. W., Zhang, Yong, and A, Mascarenhas, Appl. Phys. Lett. 76, 1267 (2000)Google Scholar
7. Liu, X., Bishop, S. G., Baillargeon, J. N., and Cheng, K. Y., Appl. Phys. Lett. 63, 208 (1993)Google Scholar
8. Onabe, K., In: MRS Symposium Proceedings v.449, edited by Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. (Pittsburgh, Pennsylvania, 1997), p. 23.Google Scholar
9. Kuroiwa, R., Asahi, H., Iwata, K., Tampo, H., Asami, K., and Gonda, S., Phys. Stat. Sol. (b) 216, 461 (1999)Google Scholar
10. Zhang, Y., Fluegel, B., Mascarenhas, A., Xin, H. P., and Tu, C. W., Phys. Rev. B 62, 4493 (2000)Google Scholar
11. Kent, P. R. C. and Zunger, A., Phys. Rev. Lett. 86, 2613 (2001)Google Scholar
12.For review, see Buyanova, I. A., Chen, W. M., and Monemar, B., MRS Internet J. Nitride Semicond. Res. 6, 2 (2001)Google Scholar