Hostname: page-component-5b777bbd6c-j65dx Total loading time: 0 Render date: 2025-06-19T17:42:56.244Z Has data issue: false hasContentIssue false
  • English
  • Français

On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level Dielectrics

Published online by Cambridge University Press:  15 February 2011

Bin Zhao ,
Shi-Qing Wang ,
Steven Anderson ,
Robbie Lam ,
Marcy Fiebig ,
P. K. Vasudev  and
Thomas E. Seidel
Bin Zhao
Affiliation:
now with Rockwell Semiconductor Systems, Newport Beach, CA
Shi-Qing Wang
Affiliation:
on assignment from National Semiconductor Corp., Santa Clara, CA
Steven Anderson
Affiliation:
SEMATECH, Austin, Texas 78741
Robbie Lam
Affiliation:
on assignment from National Semiconductor Corp., Santa Clara, CA
Marcy Fiebig
Affiliation:
now with Motorola, Austin, TX
P. K. Vasudev
Affiliation:
SEMATECH, Austin, Texas 78741
Thomas E. Seidel
Affiliation:
now with Genus, Sunnyvale, CA
Get access

Abstract

In high performance integrated circuits, low dielectric constant (low-ε) materials are required as inter-level dielectric (ILD) for on-chip interconnect to provide advantages in high speed, low dynamic power dissipation and low cross-talk noise. A variety of low dielectric constant materials, which include fluorinated silicon-oxide, porous silica and porous organic materials, chemical vapor deposited and spin-on deposited (SOD) organic materials, have been developed or are under development to fulfill this need. In this paper, we first review the need and integration architecture of low-ε materials for on-chip interconnect. Then, we discuss the consequence of using low-ε materials as ILD in advanced interconnect with emphasis on the ILD electrical characteristics and the interconnect reliability. Although the focus is on several new promising SOD low-ε materials, the developed evaluation methodology is applicable to other type low-ε materials as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 415
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1994, p. 94.Google Scholar
[2] Bohr, M. T., Technical Digest of International Electron Devices Meeting, 1995, p.241.Google Scholar
[3] Jeng, S.-P., Chang, M.-C., Kroger, T., McAnally, P., and Havemann, R. H., 1994 Symposium on VLSI Technology Digest of Technical Papers, 1995, p.73.Google Scholar
[4] Dixit, G. A., Paranjpe, A., Hong, Q.-Z., Ting, L. M., Luttmer, J. D., and Havemann, R. H., Technical Digest of International Electron Devices Meeting, 1995, p. 1001.Google Scholar
[5] Taylor, K. J., Jeng, S.-P., Eissa, M., Jin, C., Nguyen, H., and Gaynor, J., Proceedings of Schumacher Symposium on Dielectrics and CVD Metallization, 1996.Google Scholar
[6] Jin, C., Ting, L., Taylor, K., Seha, T., Luttmer, J. D., Proceedings of Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, 1996, p. 21.Google Scholar
[7] Zhao, B., Wang, S.-Q., Fiebig, M., Anderson, S., Vasudev, P. K., and Seidel, T. E., 1996 IEEE International Reliability Physics Proceedings, 1996, p. 156.Google Scholar
[8] Furusawa, T. and Homma, Y., 1995 Symposium on VLSI Technology Digest of Technical Papers, 1995, p.59.Google Scholar
[9] Waeterloos, J., Meynen, H., Coenegrachts, B., Grillaert, J., and hove, L.Van den, Proceedings of Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, 1996, p.52.Google Scholar
[10] Zhao, B., Biberger, M. A., Hoffman, V., Wang, S.-Q., Vasudev, P. K., and Seidel, T. E., 1996 Symposium on VLSI Technology Digest of Technical Papers, 1996, p. 72.Google Scholar
[11] Luther, B., White, J. F., Uzoh, C., Cacouris, T., Hummel, J., Guthrie, W., Lustig, N., Greco, S., Greco, N., Zuhoski, S., Agnello, P., Colgan, E., Mathad, S., Saraf, L., and Weitzman, E. J., Hu, C. K., Kaufman, F., Jaso, M., Buchwalter, L. P., Reynolds, S., Smart, C., Edelstein, D., Baran, E., Cohen, S., Knoedler, C. M., Malinowski, J., Horkans, J., Deligianni, H., Harper, J., Andricacos, P. C., Paraszczak, J., Pearson, D. J., Small, M., Proceedings of VLSI Multilevel Interconnection Conference, 1993, p. 15.Google Scholar
[12] Homma, T., J. Non-Cryst. Solids, vol.187, p.49, 1995.Google Scholar
[13] Laxman, R., Semiconductor International, May 1996, p. 71.Google Scholar
[14] Endo, K. and Tatsumi, T., Mater. Res. Soc. Symp. Proc., vol.381, p.249, 1995.Google Scholar
[15] Smith, D. M., Anderson, J., Cho, C. C., Johnson, G. P., and Jeng, S. P., Mater. Res. Soc. Symp. Proc., vol.381, p.261, 1995.Google Scholar
[16] Hrubesh, L. W., Keene, L. E., and Latorre, V. R., J. Mater. Res., vol.8, p.1736, 1993.Google Scholar
[17] Carter, K. R., Cha, H. J., Dipietro, R. A., Hawker, C. J., Hedrick, J. L., Labadie, J. W., McGrath, J. E., Russell, T. P., Sanchez, M. I., Swanson, S. A., Volksen, W., and Yoon, D. Y., Mater. Res. Soc. Symp. Proc., vol.381, p.79, 1995.Google Scholar
[18] Auman, B. C., Proceedings of Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, 1995, p.297.Google Scholar
[19] Lau, K. S. Y., Hendricks, N. H., Smith, a. R., and Wan, W. B., Proceedings of VLSI Multilevel Interconnection Conference, 1995, p. 126.Google Scholar
[20] Lang, C.-I., Yang, G.-R., Moor, J. A., and Lu, T.-M., Mater. Res. Soc. Symp. Proc., vol.381, p.45, 1995.Google Scholar
[21] Ito, S., Homma, Y., Sasaki, E., Uchimura, S., and Morishima, H., J. Electrochem. Soc., vol.137, p.1212, 1990.Google Scholar
[22] Babb, D. A., Ezzell, B. R., Clement, K. S., Richey, W. F., and Kennedy, A. P., Journal of Polymer Science: Part A: Polymer Chemistry, vol.30, p.3465, 1993.Google Scholar
[23] Ting, C. H., Leu, J., Lee, J. K., Kasthurirangan, J., Liao, C. N., and Ho, P. S., Advanced Metallization for ULSI Applications in 1994, p.351.Google Scholar
[24] Leu, J., Lee, J. K., Kasthurirangan, J., Liao, C. N., Ho, P. S., and Ting, C. H., presented at the SRC Topical Research Conference on Low Dielectric Constant Interlayer Dielectrics for High Performance Circuits, Rensselaer Polytechnic Institute, Troy, New York, August 9–10, 1994.Google Scholar
[25] Ting, C. H. and Seidel, T. E., Mater. Res. Soc. Symp. Proc., vol.381, p.3, 1995.Google Scholar
[26] Chatterjee, P. K., Hunter, W. R., Amerasekera, A., Aur, S., Duvvury, C., Nicollian, P. E., Ting, L. M., and Yang, P., Proceedings of IEEE International Reliability Physics, 1995, p. 1.Google Scholar
[27] Hunter, W. R., Technical Digest of International Electron Devices Meeting, 1995, p.483.Google Scholar