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Ohmic Contacts To p+-GaAs and Al0.26Ga0.74As

Published online by Cambridge University Press:  25 February 2011

W. Y. Han ,
M. W. Cole ,
L. M. Casas ,
A. DeAnni ,
M. Wade ,
K. A. Jones ,
A. Lapore ,
Y. Lu  and
L. W. Yang
W. Y. Han
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
M. W. Cole
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
L. M. Casas
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
A. DeAnni
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
M. Wade
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
K. A. Jones
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
A. Lapore
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
Y. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08855-0909
L. W. Yang
Affiliation:
Ford Microelectronics, Inc., 9965 Federal Drive, Colorado Spring, Colorado 80921 Currently with Martin Marietta Electronics Laboratory, Electronics Parkway, EP-3, Syracuse, NY 13221.
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Abstract

Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7x10-7 and 8.9x 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5x1019 and 2x1019 cm-3 respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 301
Copyright
Copyright © Materials Research Society 1994

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References

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