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Observation of Damage Structures in Proton-Implanted Gallium Arsenide by Cross-Sectional Tem

Published online by Cambridge University Press:  26 February 2011

D Loretto ,
G. T. Brown  and
I. P. Jones
D Loretto
Affiliation:
Department of Metallurgy and Materials, The University of Birmingham, PO Box 363, Birmingham, B15 2TT, U.K.
G. T. Brown
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Rd., Gt. Malvern, Worcs., WR14 3PS, U.K.
I. P. Jones
Affiliation:
Department of Metallurgy and Materials, The University of Birmingham, PO Box 363, Birmingham, B15 2TT, U.K.
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Abstract

Semi-insulating and SI-doped <100> GaAs have been irradiated to a dose of 1016 protons cm−2. Samples have been annealed for 20 minutes at 400,500 and 600°C. Cross-sectional TEN has shown the as-implanted and 400°C annealed GaAs to contain no visible damage. After 500 and 600°C anneals a heterogeneous distribution of planar raft-like defects apears on {(11} and {110}. The density of these defects is much lower in the Si-doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 133
Copyright
Copyright © Materials Research Society 1987

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References

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