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O12.6 Fracture and Deformation of Thermal Oxide Films on Si (100) Using a Femtosecond Pulsed Laser

Published online by Cambridge University Press:  01 February 2011

Joel P. McDonald ,
Vanita R. Mistry ,
Katherine E. Ray  and
Steven M. Yalisove
Joel P. McDonald
Affiliation:
Applied Physics Program, University of Michigan, 2477 Randall Laboratory, Ann Arbor, MI 48109-1120 Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, MI 48109
Vanita R. Mistry
Affiliation:
College of Engineering, University of Michigan, Lurie Engineering Center, 1221 Beal Avenue, Ann Arbor, MI 48109-2102
Katherine E. Ray
Affiliation:
College of Engineering, University of Michigan, Lurie Engineering Center, 1221 Beal Avenue, Ann Arbor, MI 48109-2102
Steven M. Yalisove
Affiliation:
Deparment of Materials Science and Engineering, University of Michigan, 2200 Hayward Ave., Ann Arbor, MI 48109 Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, MI 48109
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Abstract

Femtosecond pulsed laser damage of Silicon (100) with thermal oxide thin films was studied in order to further understand the optical and electrical properties of thin films and to evaluate their influence on the damage of the substrate. The damage threshold as a function of film thickness (2 – 1200 nm) was measured. The damage morphology produced by single laser pulses was also investigated. Two primary morphologies were observed, one in which the oxide film is completely removed, and the other in which the film is delaminated and expanded above the surface producing a bubble feature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O12.6
Copyright
Copyright © Materials Research Society 2005

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