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Nucleation of Dislocations in Strained Epitaxial Layers

Published online by Cambridge University Press:  25 February 2011

Eric P. Kvam
Eric P. Kvam*
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
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Abstract

The introduction of dislocations into initially dislocation free strained epitaxial layers is examined. Examples are given of several different sources of dislocations, and the influence of these upon the final microstructure is shown. The sources most prevalent appear to be growth defects in epilayers with strains less than about 0.01, and topography-induced surface nucleated half-loops at strains greater than about 0.02.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 447
Copyright
Copyright © Materials Research Society 1991

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