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A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

J. Lagowski ,
A. Hofl ,
L. Jastrzebski ,
P. Edelman  and
T. Esry
J. Lagowski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
A. Hofl
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
L. Jastrzebski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
P. Edelman
Affiliation:
Semiconductor Diagnostics, Inc, 6604 Harney Road, Suite F, Tampa, FL 33610M
T. Esry
Affiliation:
Lucent Technologies, Inc., 9333 South John Young Parkway, Orlando, FL 32819
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Abstract

A new generation of monitoring tools based on oxide potential and surface photovoltage measurements offers real-time, non-contact diagnostics of plasma damage, especially dielectric charge build-up, radiation damage, and heavy metal contamination. The approach relies on reusable, 10 00Åoxide monitor wafers rather than test structures. The technique generates whole wafer maps powerful for correlating plasma damage with plasma equipment characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 437
Copyright
Copyright © Materials Research Society 1996

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References

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