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Nonlinear Dependence of μeτe on Subgap Absorption in Pulse and cw Light-Soaked a-Si:H

Published online by Cambridge University Press:  10 February 2011

Nobuhiro Hata ,
Toru Ikeda  and
Akihisa Matsuda
Nobuhiro Hata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Tbaraki, 305, Japan, hata@etlrips.etl.go.jp
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Tbaraki, 305, Japan, hata@etlrips.etl.go.jp
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Abstract

We report new results from subgap absorption and transport measurements on pulse and continuous (cw) light-soaked a-Si:H which include that (1) the mobility-lifetime product of electrons (μeτe) shows the same dependence on defect subgap absorption irrespective of whether the sample was soaked by pulse or continuous lights, but that (2) the dependence of μeτe on defect subgap absorption is not linear. These results are compared with annealing energy distribution of light-induced defects, and discussed in terms of (1) annealing energy (Eann) distribution of light-induced defects (LIDs), and of (2) photo-induced structural change.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 575
Copyright
Copyright © Materials Research Society 1996

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