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Noble Gas Incorporation in Sputtered and Ion Beam Assisted Grown Silicon Films

Published online by Cambridge University Press:  03 September 2012

A. van Veen ,
M. J. W. Greuter ,
L. Niesen ,
B. Nielsen  and
K.G. Lynn
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands.
M. J. W. Greuter
Affiliation:
Department of Physics, University of Groningen, Nljenborgh 4, NL-9747 AG Groningen, The Netherlands.
L. Niesen
Affiliation:
Department of Physics, University of Groningen, Nljenborgh 4, NL-9747 AG Groningen, The Netherlands.
B. Nielsen
Affiliation:
Brookhaven National Laboratory, Physics Department, Upton NY, USA.
K.G. Lynn
Affiliation:
Brookhaven National Laboratory, Physics Department, Upton NY, USA.
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Abstract

Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self- interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 181
Copyright
Copyright © Materials Research Society 1992

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References

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