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Nitrogen and Carbon Solute Redistribution During High Fluence Nitrogen Implantation into Iron

Published online by Cambridge University Press:  26 February 2011

P. D. Ehni ,
I. L. Singer  and
S. M. Hues
P. D. Ehni
Affiliation:
National Research Council cooperative Post-doc
I. L. Singer
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000, USA
S. M. Hues
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000, USA
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Abstract

Model solute distribution studies have been performed in N-implanted Fe. Concentration-verses-depth profiles have been determined by secondary ion mass spectroscopy for Fe implanted to low fluences with isotopes 13C at 190keV and 15N at 180keV followed by 14N to high fluences. At N fluences greater than 2.5 × 1017 /cm2 dramatic changes in the 13C and 15N profiles are observed. It is proposed that these changes are caused by the lattice dilation due to precipitation of iron nitrides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 181
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Dearnaley, G. and Hartley, N.E.W., Thin Solid Films 54, 215 (1978).Google Scholar
2. Hartley, N.E.W., in Ion Implantation, edited by Hirvonen, J.K. (Academic Press, New York, 1980), p. 321.Google Scholar
3. Singer, I.L., in Ion Implantation and Ion Beam Processing of Materials, edited by Hub-ler, G.K., Holland, O.W., Clayton, C.R. and White, C.W. (North-Holland, NY 1984), p. 585.Google Scholar
4. for a review, see Singer, I.L.,Vacuum, 34, 853 (1984).Google Scholar
5. Barnavon, T., Tousset, J., Fayeulle, S., Guiraldenq, P., Treheux, D., and Robelet, M., Rad. Effs. 77, 249 (1983).Google Scholar
6. Singer, I.L. and Jeffries, R.A. in Ion implantation and Ion Beam Processing of Materials, edited by Hubler, G.K., Holland, O.W., Clayton, C.R., White, C.W. (North Holland, New York, 1984), p. 667.Google Scholar
7. Rangaswamy, M., Farkas, D., and Sobel, H.L., Nucl. Instr. and Meth. B19/20, 196 (1987).CrossRefGoogle Scholar
8. Ziegler, J.F., Biersack, J.P. and Littmark, U., Pergamon Press, NY, 1985, (TRIM Version 3.0).Google Scholar
9. Rauschenbach, B. and Kolitsch, A., phys. stat. sol. (a)80, 211 (1983).CrossRefGoogle Scholar