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Nitride, Nitrided Oxide and Oxidized Nitride for Thin Dielectrics

Published online by Cambridge University Press:  25 February 2011

S. P. Tay ,
A. Kalnitsky  and
J. P. Ellul
S. P. Tay
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada KIY 4H7
A. Kalnitsky
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada KIY 4H7
J. P. Ellul
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada KIY 4H7
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Abstract

In this paper, comparisons of material and electrical parameters between qate and interpoly dielectrics consistinq of thermal oxides, nitrides, nitrided oxides and oxidized nitrides are reported. A range of dielectrics, 5 nm to 30 nm thick, are thermally grown using a matrix of oxidation cycles, ammonia concentration and nitridation temperatures and pressures. Fabrication of polysilicon gate and interpoly capacitors is typical of industry standards. AES, RBS and ellipsometric analysis of dielectric material properties are discussed and electrical characterization results are presented.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 235
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Ellul, J.P., Tay, S.P. and Kalnitsky, A., MRS Symposia Proceedings, Vol.71, p. 493, April, 1986.Google Scholar
2. Kalnitsky, A., Tay, S.P. and Calder, I., Extended Abstract #56Q, Electrochem. Soc. Meeting, San Diego, CA, October 1986.Google Scholar
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