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Ni-Ge Intermixing on GaAs Produced by Temperature Standardized Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

Michael B. Brooks  and
Thomas W. Sigmon
Michael B. Brooks
Affiliation:
Stanford Electronics Labs, Stanford University, Stanford, CA 94305-4055
Thomas W. Sigmon
Affiliation:
Stanford Electronics Labs, Stanford University, Stanford, CA 94305-4055
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Abstract

A new Rapid Thermal Annealing technique has been developed which uses very small samples of low melting elements and eutectic alloys to standardize temperature measurements. Temperatures of thin films during anneal are shown to lie within −3°C to +13°C of nominal for measured short anneal times using a special sample geometry. Results of annealing Ge/Ni/GaAs and Au/Ge/Ni/GaAs at 200°C and 250°C are presented. Rutherford backscattering is used to analyze the films and the resulting channeling spectra show that Ge consumption follows parabolic kinetics, with an activation energy estimate of ≈ 0.7eV. The data is consistent with a controlling process of fast Ni diffusion through grain boundaries at these low temperatures. We expect that a Ni2Ge phase is being formed preferentially, along with a NixGaAs phase at the GaAs/Ni interface. In this contact metal system Au interacts only minimally for the times and temperatures studied. Our results agree with those of previous workers who studied Ni diffusion during NixGaAs phase formation at comparable temperatures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 357
Copyright
Copyright © Materials Research Society 1990

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