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A New Temperature Compensation Method For Si Wafers In Rapid Thermal Processor Using Separated Si Rings As Susceptors

Published online by Cambridge University Press:  10 February 2011

Kuo-Chung Lee ,
Hong-Yuan Chang  and
Jenn-Gwo Hwu
Kuo-Chung Lee
Affiliation:
Rm.446, Department of Electrical Engineering, National Taiwan University Taipei, Taiwan, R.O.C.
Hong-Yuan Chang
Affiliation:
Rm.446, Department of Electrical Engineering, National Taiwan University Taipei, Taiwan, R.O.C.
Jenn-Gwo Hwu
Affiliation:
Rm.446, Department of Electrical Engineering, National Taiwan University Taipei, Taiwan, R.O.C.
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Abstract

A new temperature compensation concept suitable for rapid thermal processor (RTP) with non-uniform temperature distribution was proposed in this work. Concentric Si rings with different diameters are placed between wafer and planar susceptor and are regarded as a patterned susceptor. By properly arranging the Si rings on the planar quartz or Si susceptor, one can make the semiconductor wafers have more uniform temperature distribution in a non-uniform temperature RTP system. This is a very simple and cheap method for solving the temperature non-uniformity problem in the RTP system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 187
Copyright
Copyright © Materials Research Society 1997

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References

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