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New Techniques for the Nanostructural Characterization of Semiconductor Materials and Devices Using Combined Focused Ion Beam and Transmission Electron Microscopy Techniques

Published online by Cambridge University Press:  10 February 2011

R. Hull  and
D. Dunn
R. Hull
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Thornton Hall, Charlottesville, VA 22903
D. Dunn
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Thornton Hall, Charlottesville, VA 22903
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Abstract

We describe novel techniques which extend the range of available nanostructural characterization capability for semiconductor materials and devices. These techniques combine high spatial resolution imaging and spectroscopy using transmission electron microscopy (TEM) and focused ion beam (FIB) microscopy. Specific capabilities described include nanoscale imaging of dopant distributions, ultra-high resolution secondary ion mass spectroscopy (SIMS) and tomographic image reconstruction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 141
Copyright
Copyright © Materials Research Society 1998

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