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New Photosensitive Polyimide (SIM2000XL-RTS) for Packaging Applications

Published online by Cambridge University Press:  21 February 2011

S. Jeng ,
M. Xu ,
P. L. Liu ,
H. S. Kwok  and
C. J. Lee
S. Jeng
Affiliation:
Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
M. Xu
Affiliation:
Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
P. L. Liu
Affiliation:
Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
H. S. Kwok
Affiliation:
Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
C. J. Lee
Affiliation:
Occidental Chemical Corporation, Technology Center, Grand Island, NY 14072
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Abstract

Polyimides are finding increased use as dielectric materials in multi-level metallization technology, which is the key to high-density packaging applications for microelectronics.

Newly developed photosensitive polyimidesiloxane (SIM2000XL-RTS) has been evaluated in terms of thermal stability, photosensitivity and lithography as well as dielectric breakdown properties. The sensitivity to N2 laser exposure has been measured under optimized process conditions. We also find that SIM2000XL-RTS can be processed up to 350°C without significant decomposition. Micron-scale contact images can be successfully patterned by both N2 laser and conventional UV lamp exposure. The dielectrical breakdown field strength of SIM2000XL-RTS is about 4 MV/cm by sandwich measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 111
Copyright
Copyright © Materials Research Society 1990

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