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New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems

Published online by Cambridge University Press:  10 February 2011

J. Kouvetakis ,
M. O’Keeffe ,
Louis Brouseau ,
J. McMurran ,
Darrick Williams  and
D. J. Smith
J. Kouvetakis
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe Arizona 85287
M. O’Keeffe
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe Arizona 85287
Louis Brouseau
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe Arizona 85287
Darrick Williams
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe Arizona 85287
D. J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe Arizona 85287
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Abstract

We describe the development of a new deposition method for thin oriented films of GaN on basal plane sapphire using an exclusively inorganic single-source precursor free of carbon and hydrogen, Cl2GaN3. The films have been characterized by Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (TEM) for composition morphology and structure. RBS analysis confirmed stoichiometric GaN and TEM observations of the highly conformal films revealed heteroepitaxial columnar growth of crystalline wurrtzite material on sapphire. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. We also report the reactions of Cl2GaN3 with organometallic nitriles to yield a crystalline, novel gallium carbon nitride of composition GaC3N3. Quantitative X-ray powder diffraction has been used to refine the cubic structure of this material which consists of Ga atoms octahedrally surrounded by on the average three C and three N atoms. The structurally analogous LiGaC4N4 phase has also been prepared and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 313
Copyright
Copyright © Materials Research Society 1997

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References

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