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New Insight into Damage-Related Phenomena in Si Implanted Under Extreme Conditions

Published online by Cambridge University Press:  21 February 2011

O. W. Holland ,
Bent Nielsen  and
J. D. Budai
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6048
Bent Nielsen
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973.
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6048
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Abstract

New insight into damage formation in Si(100) during self-ion irradiation is gained from processing under extreme conditions. Dislocations form in the near-surface as a result of lattice relaxation in response to strain produced by precursor defects which are shown to be vacancy-type by positron analysis. A model to account for these defects and their distribution is presented. A novel technique is demonstrated which utilizes a subsequent implantation as a depth specific probe to manipulate the vacancy-type defects. Aspects of damage growth which emerge from the probe results are discussed.

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References

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