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A New Deep Acceptor in Epitaxial Cubic SiC

Published online by Cambridge University Press:  26 February 2011

J. A. Freitas Jr  and
S. G. Bishop
J. A. Freitas Jr
Affiliation:
Sachs/Freeman Associates, Inc., Landover, MD 20785 Naval Research Laboratory, Washington, DC 20375-5000
S. G. Bishop
Affiliation:
Present address: Dept. of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801 Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

The temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 495
Copyright
Copyright © Materials Research Society 1990

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References

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