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New Applications and Analysis of Avalanche Photodiodes as Detectors for Electrons Ranging from 10 KeV to 300 KeV

Published online by Cambridge University Press:  10 February 2011

T. Kodama ,
N. Osakabe ,
J. Endo ,
A. Tonomura ,
T. Urakami ,
S. Ohsuka ,
H. Tsuchiya  and
Y. Tsuchiya
T. Kodama
Affiliation:
Department of Information Electronics, Nagoya University, Nagoya 464-01, JAPAN
N. Osakabe
Affiliation:
Advanced Research Laboratory, Hitachi Ltd., Hatoyama, Saitama 350-03, JAPAN
J. Endo
Affiliation:
Advanced Research Laboratory, Hitachi Ltd., Hatoyama, Saitama 350-03, JAPAN
A. Tonomura
Affiliation:
Advanced Research Laboratory, Hitachi Ltd., Hatoyama, Saitama 350-03, JAPAN
T. Urakami
Affiliation:
Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434, JAPAN
S. Ohsuka
Affiliation:
Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434, JAPAN
H. Tsuchiya
Affiliation:
Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434, JAPAN
Y. Tsuchiya
Affiliation:
Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434, JAPAN
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Abstract

New applications of avalanche photodiodes as fast timing detectors for electrons ranging from 10 keV to 300 keV together with an analysis of the response of silicon avalanche photodiodes to the electrons are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 553
Copyright
Copyright © Materials Research Society 1998

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