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Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

Published online by Cambridge University Press:  10 February 2011

M. Lcurrent ,
M. A. Foad ,
J. G. England ,
D. Lopes ,
C. Jones  and
D. Su
M. Lcurrent
Affiliation:
Applied Materials, Austin, Texas, USA, current_michael@amat.com
M. A. Foad
Affiliation:
Applied Materials, Horsham, West Sussex, England
J. G. England
Affiliation:
Applied Materials, Horsham, West Sussex, England
D. Lopes
Affiliation:
Applied Materials, Santa Clara, CA USA
C. Jones
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
D. Su
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
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Abstract

Atomic profiles (SIMS) and cross-section TEM images of selectively etched, annealed profiles were studied for Boron energies from 20 da eV (200 eV) to 10 keV and RTP anneals at 900, 975 and 1050 C Consistent variations of dopant depth was obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the poly mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 325
Copyright
Copyright © Materials Research Society 1997

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References

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