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Native Defects and their Interactions with Impurities in Silicon

Published online by Cambridge University Press:  15 February 2011

G. D. Watkins
G. D. Watkins*
Affiliation:
Department of Physics, Lehigh University, Bethlehem, PA 18015, gdwO@lehigh.edu
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Abstract

A review is given of what has been learned from EPR studies over the last ∼35 years concerning vacancies and interstitials in silicon. Lattice vacancies are well understood, their diffusional migration energies determined vs charge state and electronic excitation, and their interactions with most of the common impurities established. The isolated interstitial has not been observed by EPR but a great deal has been learned concerning it from studies of its interactions with impurities, and more recently from theory. The properties of these two intrinsic defects and their progeny will be analyzed to help clarify their role in both the normal thermally activated diffusion processes and the transient-enhanced ones, which are of particular current concern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 139
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

For a more complete description of the properties to be described here of the vacancies and interstitials and their interactions with impurities, with proper references to the literature, see references 2 and 3, below. No attempt will be made therefore to supply detailed literature references here, except as needed to supplement those contained therein.Google Scholar
2. Watkins, G. D., in Electronic Structure and Properties of Semiconductors, edited by Schröter, W., (Vol. 4 of Materials Science and Technology, edited by R. W. Cahn, P. Haasen, and E. J. Kramer, VCH, Weinheim, 1991) Chapter 3.Google Scholar
3. Watkins, G. D., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986), Chapter 3. This deals with the vacancy only, but in greater detail.Google Scholar
4. Baraff, G.A., Kane, E.O., and Schlüter, M., Phys. Rev. Lett. 43, 956 (1979).Google Scholar
5. For a detailed description of the experiments establishing the negative-U properties of the vacancy and interstitial boron, in addition to a general discussion of the phenomenon, see Watkins, G. D., in Festkörperprobleme (Advances in Solid State Physics), Volume XXIV, edited by Grosse, P. (Viewig, Braunschweig, 1984), p. 163.Google Scholar
6. Kimerling, L. C., Sol. St. Electr. 21, 1391 (1978).Google Scholar
7. Bourgoin, J. C. and Corbett, J. W., Rad. Effects 36, 167 (1978).Google Scholar
8. Wattins, G. D., Chatterjee, A. P., Harris, R. D., and Troxell, J. R., Semic. and Ins. 5, 321 (1983).Google Scholar
9. Watkins, G. D. and Corbett, J. W., Phys. Rev. 134, A1359 (1964).Google Scholar
10. Elkin, E. L. and Watkins, G. D., Phys. Rev. 174, 881 (1968).Google Scholar
11. Brower, K. L., in Radiation Effects in Semiconductors, edited by Corbett, J. W. and Watkins, G. D. (Gordon and Breach, New York, 1971). P. 189.Google Scholar
12. Lee, Y-H. and Corbett, J. W., Phys. Rev. B 9, 4351 (1974).Google Scholar
13. Lee, Y-H. and Corbett, J. W., Phys. Rev. B 8, 2810 (1973).Google Scholar
14. Zheng, J. F., Stavola, M., and Watkins, G. D., in 22nd International Conference on The Physics of Semiconductors, edited by Lockwood, D. J. (World Scientific, Singapore, 1995) p. 2363.Google Scholar
15. Tarnow, E., Europhys. Lett. 16, 449 (1991).Google Scholar
16. Car, R., Kelly, P. J., Oshiyama, A. and Pantelides, S.T., in Thirteenth International Conference on Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr (Metallurgical Soc. of AIME, Warrendale, PA, 1985), p. 269.Google Scholar
17. Bar-Yam, Y. and Joannopoulos, J. D., in Thirteenth International Conference on Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr, (Metallurgical Soc. of AIME, Warrendale, PA, 1985), p. 261.Google Scholar
18. A recent excellent review of the role of carbon in silicon, which combines information obtained from EPR, DLTS, and optical studies, is given by Davies, G. and Newman, R. C., in Handbook on Semiconductors. Vol. 3. edited by Mahajan, S. (Elsevier Science B.V., Amsterdam, 1994) p. 1557.Google Scholar
19. Kimerling, L. C., Asom, M. T., Benton, J. L., Devrinski, P. J., and Caefer, C. E., Mat. Sci. Forum 38–41, 141 (1989).Google Scholar
20. Troxell, J. R., Chatterjee, A. P., Watkins, G. D., and Kimerling, L. C., Phys. Rev. B 19, 5336 (1979).Google Scholar
21. Brower, K. L., Phys. Rev. B 14, 872 (1976).Google Scholar
22. Lee, Y-H., Gerasimenko, N. N., and Corbett, J. W., Phys. Rev. B 14, 4506 (1976).Google Scholar
23. Blöchl, P. E., Smargiassi, E., Car, R., Laks, D. B., Asdreoni, W., and Pantelides, S. T., Phys. Rev. Lett. 70, 2435 (1993).Google Scholar