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Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation

Published online by Cambridge University Press:  26 February 2011

Michael O. Thompson
Michael O. Thompson*
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

A transient resistance technique has been developed which allows monitoring the temperature of a thin film sample at a fixed depth from the surface following pulsed laser irradiation. The technique utilizes the temperature dependence of a thin, electrically insulated, semiconducting or metallic layer. Temperature determinations with nanosecond resolution, an absolute accuracy of ±50 K, and a relative accuracy of ±5 K are demonstrated. Combined with simultaneous interface position and velocity measurements, the undercooling at the interface during rapid solidification may be obtained. Preliminary results using this technique during the solidification of thin Ge films are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 525
Copyright
Copyright © Materials Research Society 1988

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References

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