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Multiphoton Excitation Studies on GaN with PS Pulses

Published online by Cambridge University Press:  10 February 2011

I. H. Libon ,
C. Voelkmann ,
D. Kim ,
V. Petrova-Koch  and
Y. R. Shen
I. H. Libon
Affiliation:
Technische Universität Munich, Physik-Department El6, D-85747 Garching, Germany
C. Voelkmann
Affiliation:
Technische Universität Munich, Physik-Department El6, D-85747 Garching, Germany
D. Kim
Affiliation:
University of California, Department of Physics, Berkeley, CA 94720, USA
V. Petrova-Koch
Affiliation:
Technische Universität Munich, Physik-Department El6, D-85747 Garching, Germany
Y. R. Shen
Affiliation:
University of California, Department of Physics, Berkeley, CA 94720, USA
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Abstract

We report the observation of UV photoluminescence (PL) from wurtzite GaN by multiphoton excitation. The dependence of the PL intensity on excitation intensity as well as PL excitation measurements with sub-bandgap photon energies indicate the existence of deep defect states centered at about 1.0 eV above the top of the valence band. This result was confirmed by a sum-frequency excitation spectrum. We correlate these measurements with the omnipresent yellow luminescence in GaN. Our two-photon PL excitation spectrum yields a two-photon absorption coefficient that agrees very well with theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 621
Copyright
Copyright © Materials Research Society 1997

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References

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