Hostname: page-component-54dcc4c588-dbm8p Total loading time: 0 Render date: 2025-10-05T00:19:55.749Z Has data issue: false hasContentIssue false
  • English
  • Français

Mosaic Spread of the Heteroepitaxial Structures from Renninger Scan

Published online by Cambridge University Press:  03 September 2012

S. L. Morelhão  and
L. P. Cardoso
S. L. Morelhão
Affiliation:
Instituto De Ffsica - Unicamp, CP 6165 13081, Campinas, SP, Brazil
L. P. Cardoso
Affiliation:
Instituto De Ffsica - Unicamp, CP 6165 13081, Campinas, SP, Brazil
Get access

Abstract

In this work, a method of obtaining mosaic spread of the heteroepitaxial structures using Renninger scan (RS) peak profiles is reported. A simulation program was developed in order to account for the influence of the wavelengths, incident beam divergence, sample mosaic spread (layer and substrate) in the profile of the RS peaks. Surface three beam multiple diffraction cases with a forbidden or even very weak primary reflections are used to provide simpler intensity expressions and high intensity in RS. GaAs/Si samples have been analyzed as an application of this method.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Renninger, M., Z. Kristallogr. 106, 141 (1937)Google Scholar
2. Morelhão, S. L., Cardoso, L. P., Sasaki, J. M., and Sachs, A. C., Defect Control in Semiconductors, edited by Sumino, K. (Elsevier, North-Holland, 1990) p. 1117 Google Scholar
3. Isherwood, B. J., Brown, B. R., and Halliwell, M. A. G., J. Cryst. Growth, 54, 449 (1981)Google Scholar
4. Morelhao, S. L., Cardoso, L. P., Sasaki, J. M., and de Carvalho, M. M. G., J. Appl. Phys., 70 (5), 2589 (1991)Google Scholar
5. Caticha-Ellis, S., Acta Cryst. A25, 666 (1969)Google Scholar
6. Morelhão, S. L., and Cardoso, L. P., J. Cryst. Growth, 110, 543 (1991)Google Scholar
7. Sasaki, J. M., Pereira, A. P., Morelhão, S. L., de Oliveira, C. E. M. and Cardoso, L. P., Rev. Fis. Apl. e Instrum., 6 (2), 78 (1992)Google Scholar
8. Barreto, C. L., de Carvalho, M. M. G., Ito, K. M. and Fraas, L. M., Rev. Fis. Apl. e Instrum., 2 (4), 309 (1987)Google Scholar
9. Stolz, W., Guimaraes, F. E. G., and Ploog, K., J. Appl. Phys. 63 (2), 492 (1988)Google Scholar