Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-05T14:37:55.608Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology of Low Temperature Carbon Films Prepared by VHF CVD: Correlation with Field Emission

Published online by Cambridge University Press:  10 February 2011

A.N. Titkov ,
A.I. Kosarev ,
A.J. Vinogradov ,
Z. Waqar ,
I.V. Makarenko  and
T. Felter
A.N. Titkov
Affiliation:
A.F.Ioffe Physico-Technical Institute, St.-Petersburg, 194021, Russia
A.I. Kosarev
Affiliation:
A.F.Ioffe Physico-Technical Institute, St.-Petersburg, 194021, Russia
A.J. Vinogradov
Affiliation:
A.F.Ioffe Physico-Technical Institute, St.-Petersburg, 194021, Russia
Z. Waqar
Affiliation:
A.F.Ioffe Physico-Technical Institute, St.-Petersburg, 194021, Russia
I.V. Makarenko
Affiliation:
A.F.Ioffe Physico-Technical Institute, St.-Petersburg, 194021, Russia
T. Felter
Affiliation:
Sandia National Laboratory, Livermore, CA 94550, USA
Get access

Abstract

The effect of deposition parameters and substrate on the morphology of carbon films prepared in VHF plasma at low temperature has been studied by Atomic Force Microscopy. Carbon films demonstrating superior emission characteristics were the smoothest, but not all of the smoothest films demonstrated good emission. Significant influence of pre-growth treatment of the substrate surface on the emission characteristics of the films was found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 149
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Geis, M.W., Efremov, N.N., Woodhouse, J.D., McAleese, M.D., Marchyvka, M., Socker, D.G., and Hochedez, J.F., IEEE Electron DeviceLett., 12, 456 (1991).Google Scholar
2 Wang, C., Garcia, A., lngram, D.C., Lake, M., and Kordesch, M.E., Electronics Lett., 27, 1459 (1991).Google Scholar
3 Xu, N.S., Tzeng, Y., and Latham, R.V., J.Phys. D 26, 1776 (1993).Google Scholar
4 Okano, K., Koizumi, S, Silva, S.R.P., Amaratunga, G.A.J., Nature, 389, 140 (1996).Google Scholar
5 Himpsel, F.J., Knapp, J.A., Vechten, J. Van, and Eastman, D.E., Phys.Rev. B 20, 624 (1979).Google Scholar
6 Paate, B.B., Surf.Sci. 165, 83 (1986).Google Scholar
7 Geis, M.W., Twichell, J.C., Macaulay, J., and Okano, K.. Appl.Phys.Lett. 67, 1328 (1995).Google Scholar
8 Schafer, J., Ristein, J., and Ley, L., J.Non-Cryst.Solids, 164–166, 1123 (1993).Google Scholar
9 Talin, A.A., Pan, L.S., McCarty, K.F., Felter, T.E., Doerr, H.J., Bunshah, R.F., Appl.Phys.Lett., 69, 3842 (1996).Google Scholar
10 Kosarev, A.I., Zhimov, V.V., Vinogradov, A.J., Shutov, M.V., Bormatova, L.V., Givargizov, E.I., and Felter, T.E. (MRS-98 Spring Meeting)Google Scholar
11 Groening, O., Kuettel, O.M., Schaller, E., Groening, P., and Schlapbach, L., Appl. Phys. Lett., 69 476 (1996).Google Scholar
12 Bagic, S. and Latham, R.V., J.Phys. D 21, 200 (1988).Google Scholar
13 Shovlin, J.D. and Kordesch, M.E., Appl.Phys.Lett., 65, 863(1994)Google Scholar
14 Okano, K. and Gleason, K.K., Electron. Lett., 31, 74 (1995)Google Scholar
15 Kuettel, O.M., Groening, O., Nilsson, L., Diederich, L., and Schlapbach, L., Proc.SMAC-97, Cambridge, UKGoogle Scholar