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Morphology and Step Coverage of In-Situ Doped Polysilicon Films Deposited by Single Wafer CVD

Published online by Cambridge University Press:  21 February 2011

Jon T. Fitch ,
Rama I. Hegde ,
Israel Beinglass  and
Mali Venkatesan
Jon T. Fitch
Affiliation:
Advanced Products Research and Development Laboratory, MD-K10, Motorola, 3501 Ed Bluestein Blvd., Austin, TX 78721
Rama I. Hegde
Affiliation:
Advanced Products Research and Development Laboratory, MD-K10, Motorola, 3501 Ed Bluestein Blvd., Austin, TX 78721
Israel Beinglass
Affiliation:
Applied Materials, 3050 Bowers Avenue, M/S 0115, Santa Clara, CA 95054
Mali Venkatesan
Affiliation:
Applied Materials, 3050 Bowers Avenue, M/S 0115, Santa Clara, CA 95054
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Abstract

In-situ doped polysilicon films were deposited by single wafer low pressure chemical vapor deposition (LPCVD) over a temperature range of 590–640°C using SiH4 and dopant gases of B2H6, AsH3, and PH3. Deposition rate, sheet resistance, step coverage and surface roughness measurements of the films were made. The surface chemistry of these three in-situ doping processes is reviewed. Analysis shows how the physical properties of the deposited polysilicon films derive from the surface chemistry.

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References

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