Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-04T16:52:06.033Z Has data issue: false hasContentIssue false
  • English
  • Français

Monocrystam Disiocationless Si:Ge, Grown from the Helt Wits Gd Impurity

Published online by Cambridge University Press:  25 February 2011

Borschensky V.V. ,
Brinkevich D.I. ,
Petrov V.V.  and
Prosolovch V.S.
Borschensky V.V.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Brinkevich D.I.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Petrov V.V.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Prosolovch V.S.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Get access

Abstract

The properties of Si grown from the melt having impurities of germanium and gadolinium have been studied by IR-absorption and Hall effect methods.It was stated that Ge and Gd are effective getters for technological impurities of oxygen and carbon in silicon melt. It has been shown that the combined doping by rare earth and isovalent impurities allows to increase the thermostability of dislocationless monocrystals of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 403
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dutov, A.G., Karpov, Y u.A., Komar, V.A., Petrov, V.V., Prosolovich, V.S., Turovsky, B.M., Ohesnokov, S.A., Yankovsky, Yu.N. Izv. AN SSSR. Neorgan.mat. 25, 1589, (1989).Google Scholar
2. Babitsky, Y u.M., Gorbacheva, N.I., Grinshtein, P.M., Ilyin, M.A., Milvidsky, M.G., Turovsky, B.M.. Fiz. Tekhn. Poluprovodn. 18,1309, (1984).Google Scholar
3. Brinkevich, D.I., Gorbacheva, N.I., Petrov, V.V., Prosolovich, V.S., Turovsky, B.M. Isv.AN SSSR.Neorgan.mat. 25, 1376,(1989).Google Scholar
4. Bochkarev, E.P., Grishin, V.P., Karpov, Yu.A., Marunina, M.I.- Properties of doped semiconductors. (Nauka, Moskow, 1977)p.88.Google Scholar
5. Kaiser, W., Prisch, H.L., Reiss, H.. Phys.Rev. 112,1546, 1958.Google Scholar
6. Kanamori, A., Kanamori, M..J.Appl.Phys. 50,8095,(1979).Google Scholar
7. Bean, A.R., Newman, R.C..J.Phys.Ohem.Sol. 33,255, (1972).Google Scholar
8. Markevich, V.P., Murin, L.I..Phys.Stat.Sol.(a),111,K149,(1989).Google Scholar