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Monitoring of indium x-ray peak to optimize InxGa1-xN layer grown by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  10 February 2011

Hongqiang Lu ,
Malathi Thothathiri ,
Ziming Wu  and
Ishwara Bhat
Hongqiang Lu
Affiliation:
Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, NY12180
Malathi Thothathiri
Affiliation:
Material Engineering Department, Rensselaer Polytechnic Institute, Troy, NY12180
Ziming Wu
Affiliation:
Material Engineering Department, Rensselaer Polytechnic Institute, Troy, NY12180
Ishwara Bhat
Affiliation:
Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, NY12180
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Abstract

Indium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1005
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyohu, H., and Sguimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996)Google Scholar
2. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995)Google Scholar
3. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Yamada, T. and Mukai, T., Jpn. J. Appl. Phys. 34, LI332 (1995)Google Scholar
4. Nagatomo, T., Kuboyama, T., Minamino, H., and Omoto, O., Jpn. J. Appl. Phys. 28, LI334 (1989)Google Scholar
5. Yoshimoto, N., Matsuoka, T., Sasaki, T., and Katsui, A., Appl. Phys. Lett. 59, 2251 (1991)Google Scholar
6. Matsuoka, T., Yoshimoto, N., Sasaki, T., and Katsui, A., J. Electron. Mat. 21, 157 (1992)Google Scholar
7. Nakamura, S. and Mukai, T., Jpn. J. Appl. Phys. 31, L1457 (1992)Google Scholar
8. Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S.M., Piner, E. L., and EI-Masry, N. A., Appl. Phys. Lett 67, 1856 (1995)Google Scholar