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Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

Published online by Cambridge University Press:  25 February 2011

Masahiro Yoshimoto ,
Tsuzumi Tsuji ,
Atsushi Kajimoto  and
Hiroyuki Matsunami
Masahiro Yoshimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Tsuzumi Tsuji
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Atsushi Kajimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
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Abstract

GaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 495
Copyright
Copyright © Materials Research Society 1992

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References

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