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Molecular beam epitaxy growth of Sr1-x Kx Fe2As2 and Ba1-x Kx Fe2As2

Published online by Cambridge University Press:  30 July 2012

Michio Naito ,
Shinya Ueda ,
Soichiro Takeda ,
Shiro Takano  and
Akihiro Mitsuda
Michio Naito
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shinya Ueda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Soichiro Takeda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shiro Takano
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Akihiro Mitsuda
Affiliation:
Department of Physics, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
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Abstract

Single-crystalline films of superconducting Sr1-x Kx Fe2As and Ba1-x Kx Fe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of T c in Ba1-x Kx Fe2As2 for x = 0.0 to 1.0. The highest T c on (T c end) so far attained for Ba1-x Kx Fe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

Keywords

superconductingmolecular beam epitaxy (MBE)Fe

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References

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