Hostname: page-component-7dd5485656-dk7s8 Total loading time: 0 Render date: 2025-10-31T05:58:36.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Beam Epitaxial Growth of Gaas on Silicon with Buried Implanted Oxides

Published online by Cambridge University Press:  28 February 2011

K. Das ,
T.P. Humphreys ,
J.B. Posthill ,
N. Parikh ,
J. Tarn ,
N. El-Masry ,
S.M. Bedair ,
W.K. Chu  and
J.J. Wortman
K. Das
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
T.P. Humphreys
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
J.B. Posthill
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
J. Tarn
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
N. El-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
S.M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
W.K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
J.J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
Get access

Abstract

We report the first results of direct growth of GaAs by molecular beam epitaxy on nominally (100) oriented silicon with buried implanted oxides. Rutherford backscattering and transmission electron microscopy techniques have been used to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 513
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 VLSI Electronics Microstructure Science, Vol. 4, ed., N.G. Einspurch, (Academic Press, New York, 1980).Google Scholar
2 Tsutsui, K., Nakazawa, T., Asano, T., Ishiwara, H., and Furukawa, S., IEEE Electron Device Lett., EDL-8, 277 (1987).Google Scholar
3. Semiconductor-on-insulator and thin film transistor technology, Symposia Proc. vol., 53, ed. A. Chiang, M. W. Geis and L. Pfeiffer, (Materials Research Society, Pittsburgh, Pennsylvania, 1986).Google Scholar
4 Yershov, V. I. and Givargizov, E. I., J. Crystal Growth. 66, 239 (1984).Google Scholar
5 X. M. Bao, X. F. Huang, P. Han and J. M. Yin, in Ref. 3, pp. 107-111.Google Scholar
6 L. Xiqiang, Z. Weiwen, L. Chenglu, W. Weiyuan and T. Shihchang, in Ref. 3, pp. 113-115.Google Scholar
7 Chin, A., Bhattacharya, P. K. and Kothiyal, G. P., J. Appl. Phys. 62, 1469 (1987).Google Scholar
8 W. Zhu and W. Wang, in Ref. 3, pp. 101-106.Google Scholar
9 Singer, P. H., in Semiconductor International, 71 April (1987).Google Scholar
10 Siskos, S., Fontaine, C. and Munoz-Yague, A., Appl. Phys. Lett., 44’ 1146 (1984).Google Scholar
11 Tsutsui, K., Ishiwara, H. and Furukawa, S., S., Appl. Phys. Lett., 48, 587 (1986).Google Scholar
12 Pearton, S. J., Vernon, S. M., Short, K. T., Brown, J. M., Abernathy, C. R., Caruso, R., Chu, S. N. G., Haven, V. E. and Bunker, S. N., Appl. Phys. Lett., 51, 1188 (1987).Google Scholar
13 Kern, W. and Puotinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar