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Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates

Published online by Cambridge University Press:  26 February 2011

T. P. Humphreys ,
C. J. Miner ,
N. R. Parikh ,
K. Das ,
M. K. Summerville ,
J. B. Posthill ,
R. J. Nemanich  and
C. A. Sukow
T. P. Humphreys
Affiliation:
Bell-Northem Research Ltd., Ottawa, Ontario KIY 4H7, Canada.
C. J. Miner
Affiliation:
Bell-Northem Research Ltd., Ottawa, Ontario KIY 4H7, Canada.
N. R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599–3255.
K. Das
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7907.
M. K. Summerville
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7907.
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194.
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695–8202.
C. A. Sukow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695–8202.
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Abstract

Epitaxial GaAs layers have been grown by molecular beam epitaxy on (1012) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He+ ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (1012) sapphire substrates.

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References

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