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Modulation Spectroscopy of Layered Structures

Published online by Cambridge University Press:  28 February 2011

O.J. Glembocki
O.J. Glembocki*
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Modulation spectroscopies, such as electroreflectance and photoreflectance have become popular as room temperature probes of layered structures. Because of their derivative nature, one observes sharp optical features related to critical points in the dielectric function of the material under study. This allows us to obtain information such as alloy concentration, carrier density, well widths of quantum wells and thicknesses of the constituent layers in superlattices. In this paper, we will review the application of modulation spectroscopy to the study of optical and electronic properties of layered structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 631
Copyright
Copyright © Materials Research Society 1990

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References

1Cardona, M. in Modulation Spectroscopy. Academic Press, New York, 1969.Google Scholar
2Pollak, F.H., Proc. SPIE, 276, 142 (1981).Google Scholar
3Glembocki, O.J., Shanabrook, B.V., Bottka, N., Beard, W.T. and Comas, J., Appl. Phys. Lett. 46, 970 (1985).Google Scholar
4Pollak, F.H. and Glembocki, O.J., Proc. SPIE, 946,(1988).Google Scholar
5Shanabrook, B.V., Glembocki, O.J. and Beard, W.T., Phys. Rev. B35, 2540 (1987-I).Google Scholar
6Bhattacharya, R.N., Shen, H., Parayanthal, P., Pollak, F.H., Coutts, T. and Aharoni, H., Phys. Rev., B 37, 4044 (1988-I).Google Scholar
7Theis, W.M., Sanders, G.D., Leak, C.E., Bajaj, K.K. and Morkoc, H., Phys. Rev. B 37, 3042 (1988).Google Scholar
8Glembocki, O.J., Snow, E.S., Little, J.W. and Leavitt, R.P., to be published, Phys. Rev.Google Scholar
9Seraphin, B.O. and Bottka, N., Phys. Rev. 145, 628 (1966).Google Scholar
10Klipstein, P.C. and Apsley, N., J. Phys. C, 19, 6461 (1986).Google Scholar
11Thorn, A.P., Shields, A.J., Klipstein, P.C., Apsley, N. and Kerr, T.M., in press, J. Phys. C, 20, 4229 (1987).Google Scholar
12Zheng, X.L., Heiman, D., Lax, B., B and Chambers, F.A., Appl. Phys. Lett., 52, 287 (1988).Google Scholar
13Aspnes, D.E., Surf. Sci., 37, 418 (1973).Google Scholar
14Glembocki, O.J. and Shanabrook, B.V., Superlattices and Microstructures, 5, 603 (1989).Google Scholar
15Aspnes, D.E. and Studna, A., Phys. Rev. B7, 4605 (1973).Google Scholar
16Enderlein, R., Jiang, D.S. and Tang, Y.S., Phys. Status Solidi b145, 167 (1988).Google Scholar
17Klipstein, P.C., Tapster, P.R., Apsley, N., Anderson, D.A., Skolnick, M.S., Kerr, T.M., and Woodbridge, K., J. Phys. C, 19, 857 (1986).Google Scholar
18Glembocki, O.J. and Shanabrook, B.V., Superlattices and Microstructures, 3, 235 (1987).Google Scholar
19Toyozawa, Y., Progress of Theoretical Physics, 20, 53 (1958).Google Scholar
20Shen, H., Pan, S.H., Pollak, F.H., Dutta, M., and AuCoin, T.R., Phys. Rev. B36, 9384 (1987).Google Scholar
21Glembocki, O.J., Shanabrook, B.V., Bottka, N., Beard, W.T. and Comas, J., Proc. SPIE, 524, 86 (1985).Google Scholar
22Sze, S.M. in Physics of Semiconductor Device, p 362 (Wiley Interscience, New York, 1981).Google Scholar
23Gaskill, D.K., Bottka, N., Sillmon, R.S., Herman, M.H., Ward, I.D., and Reynolds, C.L., Proc. Materials Research Society, (this conference), (Boston, 1989).Google Scholar
24Pearsall, T.P., Pollak, F.H., Bean, J.C., Hull, R., Phys. Rev. B33, 6821 (1986).Google Scholar
25Bottka, N., Gaskill, D.K., Griffiths, R.J.M., Bradley, R.R., Joyce, T.B., Iito, C. and Mclntyre, D., J. Cryst. Growth, 93, 481 (1988).Google Scholar
26Dimoulas, A., Tzanetakis, P., Georgakilas, A., Glembocki, O.J. and Christou, A., submitted, Appl. Phys. Lett.Google Scholar
27Stoltz, W., Guimarae, F.E.G. and Ploog, K., J. Appl. Phys. 63, 492 (1988).Google Scholar
28Chang, T.C., and Schulman, J.N., Appl. Phys. Lett., 43, 536 (1983).Google Scholar
29Glembocki, O.J., Shanabrook, B.V. and Beard, W.T., Surf. Sci., 174, 206 (1986).Google Scholar
30Shen, H., Parayanthal, P., Pollak, F.H., Smirl, A.L., Schulman, J.N., McFarlane, R.A., and D’Haenens, I., Solid State Commun., 59, 557 (1986).Google Scholar
31Mathieu, H., Lefebvre, P., Allegre, J., Gil, B. and Regreny, A., Phys. Rev. B36, 6581 (1987).Google Scholar
32Lee, Y.R., Ramdas, A.K., Chambers, F.A., Meese, J.M., and Ram Mohan, L.R., Proc. SPIE, 794, 105 (1987).Google Scholar
33Shanabrook, B.V., Glembocki, O.J., Broido, D.A., Vina, L., and Wang, W.I., J. De Physique, 48, C5–235(1987).Google Scholar
34Ksendzov, A., Shen, H., Pollak, F.H. and Bour, D.P., Proc. 5th. Int. Conf. on Modulated Semiconductor Structures, p 511 (Ann Arbor Michigan, 1989).Google Scholar
35Shanabrook, B.V., Glembocki, O.J., Broido, D.A., Vina, L. and Wang, W.I., Phys. Rev. B39, 3411 (1989).Google Scholar
36Joyce, M.J., Johnson, M.J., Gal, M. and Usher, B.F., Phys. rev. B38, 1097B (1988).Google Scholar
37Voisin, P., Proc. 5th. Int. Conf. on Modulated Semiconductor Structures, p 111 (Ann Arbor, Michigan, 1989).Google Scholar
38Fujimoto, H., Hamaguchi, C., Nakazawa, T., Imanishi, K., Taniguchi, K. and Sasa, S., Proc. 5th. Int. Conf. on Modulated Semicond. Structures, p 315 (Ann Arbor, Michigan, 1989).Google Scholar
39Finkman, E., Sturge, M.D., Meynadier, M.-H., Nahory, R.E., Tamargo, M.C., Hwang, D.M. and Chang, C.C., Journal of Luminescence 39, 57 (1987).Google Scholar