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Modification of AmBv Semiconductor Layers by Ion Implantation

Published online by Cambridge University Press:  22 February 2011

W. Wesch
W. Wesch*
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Helmholtzweg 3, O - 6900 Jena, Germany
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Abstract

The damage production in GaAs, InAs, GaP and InP implanted with different mass ions in the temperature region 80K to 450K has been investigated by means of the RBS/channeling technique at 300K and 100K as well as by optical transmission and reflection measurements. The influence of the implantation parameters on the damage production as well as the differences observed for the various materials are discussed. Further, results concerning the electrical activation after rapid thermal annealing of GaAs and InP implanted at different temperatures are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 297
Copyright
Copyright © Materials Research Society 1993

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References

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