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Modelling the Dielectric Growth on Silicon Produced in a Nitrous Oxide Rtp Environment

Published online by Cambridge University Press:  21 February 2011

H Barry Harrison ,
Sima Dimitrijev ,
Denis Sweatman ,
Joanna Parker  and
Stephanie Preston
H Barry Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia, 4111
Sima Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia, 4111
Denis Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia, 4111
Joanna Parker
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia, 4111
Stephanie Preston
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia, 4111
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Abstract

The results of measurements of the physical properties of the dielectric grown on various orientations and surface doping concentration on silicon in an N2O environment are presented. We use this data to produce a model that predicts the dielectric thickness as a function of time and temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 413
Copyright
Copyright © Materials Research Society 1993

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References

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