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Modeling of the Signal Induced by an Incident Radiation in Semi-Insulating GaAs Detectors

Published online by Cambridge University Press:  10 February 2011

Adriano Cola ,
Lorenzo Vasanelli  and
Lino Reggiani
Adriano Cola
Affiliation:
Istituto per lo Studio di Nuovi Materiali per l’Elettronica, CNR, Via Arnesano 73100 Lecce, ITALY
Lorenzo Vasanelli
Affiliation:
Istituto per lo Studio di Nuovi Materiali per l’Elettronica, CNR, Via Arnesano 73100 Lecce, ITALY Unita’ INFM, Dipartimento di Scienza dei Materiali, Universita’ di Lecce, Via Arnesano 73100 Lecce, ITALY
Lino Reggiani
Affiliation:
Unita’ INFM, Dipartimento di Scienza dei Materiali, Universita’ di Lecce, Via Arnesano 73100 Lecce, ITALY
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Abstract

We develop a Monte Carlo simulator of the charge signal induced by an external radiation on a semi-insulating GaAs detector. The role played by trapping and detrapping processes and the dynamics of generated carriers are investigated. The relative contribution to the charge signal of fast and slow time components as well as the time constant of the slow component are studied as a function of the applied voltage. Present findings provide a physical interpretation of available experimental results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 453
Copyright
Copyright © Materials Research Society 1998

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References

1. Cola, A., Reggiani, L., and Vasanelli, L., Semicond.Sci. and Technol. 12 p. 1358 (1997)Google Scholar
2. McGregor, D. S., Rojeski, R. A., Knoll, G. F., Terry, F. L., Jr., East, J., and Eisen, Y., J. Appl. Phys. 75 (1994) 7910 Google Scholar
3. Cola, A., Reggiani, L., and Vasanelli, L., J. Appl. Phys. 81, p.999 (1997)Google Scholar
4. Cola, A., Vasanelli, L., Reggiani, L., Cavallini, A., Nava, F., Nuclear Instrum. & Meth. in Physics Research A 395 p. 98 (1997)Google Scholar
5. Donnelly, I. J., and Williams, M.L., Nucl. Instrum. & Meth. A 395 p.9 (1997)Google Scholar
6. Ramo, S., Proc. I.R.E. 27 p. 584 (1939)Google Scholar
7. Pellegrini, P., Phys. Rev. B 34 p.5921 (1986)Google Scholar
8. Kao, C., and Hwang, W., Electrical Transport in Solids (Pergamon Press, Oxford, 1981) p.228 Google Scholar
9. Martin, G. M. in: Semi-lnsulating II1-V Materials (Nottingham, 1980) p. 13 Google Scholar
10. Alietti, M., Canali, C., Cavallini, A., Papa, C. del, Nava, F., Re, V., Lanzieri, C., in Gallium Arsenide and Related Compounds, edited by Pelfer, P. G., Ludwig, J., Runge, K., and Rupprecht, H. S. (World Scientific, Singapore, 1996) p. 114 Google Scholar
11. Rogalla, M., Eich, Th., Evans, N., Geppert, R., Goppert, R., Irsigler, R., Ludwig, J., Runge, K., Schmid, Th. and Marder, D.G. Nucl. Instrum. & Meth. A 395 p.49 (1997).Google Scholar