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Modeling Electromigration-Induced Stress Buildup Due to Nonuniform Temperature

Published online by Cambridge University Press:  22 February 2011

J. J. Clement ,
C. V. Thompson  and
A. Enver
J. J. Clement
Affiliation:
Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
C. V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
A. Enver
Affiliation:
Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
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Abstract

Atomic transport due to electromigration in interconnect lines in integrated circuits depends strongly on temperature. Therefore temperature nonuniformities can create sites of atomic flux divergence resulting in material accumulation or depletion leading to failure. The mechanical stress which will evolve at the sites of material flux divergence will oppose the electromigration driving force. A model is developed to describe the stress evolution during electromigration in the presence of temperature nonuniformnities. Solutions of the differential equations describing the electromigration-induced stress buildup are calculated numerically. The solutions are compared to experimental data in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 353
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. d'Heurle, F. M. and Ho, P. S., p. 243 in Thin Films - Interdiffusion and Reactions, edited by Poate, J. M., Tu, K. N., and Mayer, J. W., Electrochemical Society Inc. (Wiley, New York, 1978).Google Scholar
2. Korhonen, M. A., Børgesen, P., Tu, K. N., and Li, C.-Y., J. Appl. Phys. 73, 3790 (1993).Google Scholar
3. Herring, C., J. Appl. Phys. 21, 437 (1950).Google Scholar
4. Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pbtzl, H., IEEE Trans. Computer Aided Design CAD–4, 384 (1985).Google Scholar
5. Venkatraman, R. and Bravman, J., J. Mater. Res. 7, 2040 (1992).Google Scholar
6. Moske, M. A., Ho, P. S., Mikalsen, D. J., Cuomo, J. J., and Rosenberg, R., J. Appl. Phys. 74, 1716 (1993).Google Scholar
7. Greenebaum, B., Sauter, A. I., Flinn, P. A., and Nix, W. D.. Appl. Phys. Lett. 58, 1845 (1991).Google Scholar
8. Schwarzenberger, A. P., Ross, C. A., Evetts, J. E. and Greer, A. L., J. of Electronic Mat. 17, 473 (1988).Google Scholar
9. Ghate, P. B., Proc. 23rd Annual International Reliability Physics Symposium (IEEE, New York, 1982), p. 292.)Google Scholar