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Modeling Boron Diffusion in Polycrystalline HfO2 Films

Published online by Cambridge University Press:  01 February 2011

Chun-Li Liu
Chun-Li Liu*
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola Inc., Mesa, AZ 85202
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Abstract

We present ab-initio modeling results including formation, migration, and activation energies for B diffusion through bulk and grain boundaries in polycrystalline HfO2 films. Modeling results clearly indicate that B can penetrate through a 40 Å HfO2 film via grain boundary diffusion, but not by bulk diffusion. SIMS analysis of B concentration profiles for polysilicon/HfO2/Si gate stacks after different anneals showed double B peaks at the interfaces and thus confirmed the modeling prediction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B4.4
Copyright
Copyright © Materials Research Society 2002

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