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Model of Hydrogen-Mediated Metastable Changes in a Two-Domain Amorphous Silicon Network

Published online by Cambridge University Press:  17 March 2011

Jonathan Baugh  and
Daxing Han
Jonathan Baugh
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina at Chapel Hill Chapel Hill, NC 27599-3255
Daxing Han
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina at Chapel Hill Chapel Hill, NC 27599-3255
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Abstract

A phenomenological model for the light-induced metastability of a-Si:H is proposed in which a two-domain model of the amorphous network plays a central role. Boundaries between high and low density domains are associated with a significant fraction of the clustered Si-H in aSi:H. Weakly bonded hydrogen at these boundaries catalyzes metastable local configuration changes in the Si network due to non-radiative carrier recombination, leading qualitatively to both the gross structural changes and the increase in electronic defect density that are observed experimentally.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A19.1
Copyright
Copyright © Materials Research Society 2001

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References

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