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A Model for the Etching of Ti and Tin in SC-1 Solutions

Published online by Cambridge University Press:  10 February 2011

Steven Verhaverbeke  and
Jennifer W. Parker
Steven Verhaverbeke
Affiliation:
CFM Technologies, 1336 Enterprise Drive, West Chester, PA 19380
Jennifer W. Parker
Affiliation:
CFM Technologies, 1336 Enterprise Drive, West Chester, PA 19380
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Abstract

The Standard Clean 1 (SC-1), developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1], consists of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water. (SC-1 is also called the Airfmonium-Hydroxide Peroxide Mixture or APM). Originally, this chemical mixture was developed for cleaning silicon wafers and it has proven to be the most efficient particle removing agent found to date. SC-1 can, however, also be used for etching. SC-1 will etch the following materials: SiO2, Si3N4, Si, Ti and TiN. On top of this, SC-1 will grow an oxide on several materials (i.e., bare silicon).

In this paper, a quantitative model for the SC-1 solution is presented. The etching of Ti and TiN is shown to be fundamentally different from the etching of SiO2. The mixture of Ammonium-hydroxide and Hydrogen Peroxide must be optimized differently for Ti and TiN etching than for the particle removal from Silicon wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 447
Copyright
Copyright © Materials Research Society 1997

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References

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