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Model for Estimation of Metallization Lifetime Including Electromigration and Thermo-Mechanical Stress Relaxation

Published online by Cambridge University Press:  10 February 2011

Herbert F. Roloff  and
Johannes Fellinger
Herbert F. Roloff
Affiliation:
SIEMEN AG,Semiconductors, D-81617 Munich, Herbert.Roloff@hl.siemens.de
Johannes Fellinger
Affiliation:
SIEMEN AG,Corporate Technology, D-81739 Munich, Johannes. Fellinger@mchp.siemens.de
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Abstract

Future semiconductor technologies with structural dimensions less than 0.35 µm and four or more metallization layers impede the realization of the reliability requirements due to their complexity and increasing operating conditions (>5 mA/µm2). Therefore it is necessary to provide reliability appraisal methods which ensure the operation lifetimes (up to 30 years) required by the market.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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References

[1] Matsunaga, Nonaki, Shibata, Hideki : Accurate, Non-Time-Intensive Evaluation of the Stress-Migration Endurance for Layered Al Interconnects. 1994 IEEE / IRPS pp. 256–260 10.1109/RELPHY.1994.307827Google Scholar
[2] Tezaki, Atsumu, Mineta, Takashi, Egawa, Hidemitsu, Noguchi, Tatsuo : Measurement of Three Dimensional Stress and Modeling of Stress induced Migration Failure in Aluminum Interconnects. 1990 IEEE / IRPS pp. 221–229 10.1109/IRPS.1990.363525Google Scholar
[3] Li, Junhui, Dasgupta, Abhijit : Failure-Mechanism Models for Creep and Creep Rupture. IEEE Transactions on Reliability, Vol. 42, No. 3, 1993 September pp. 339–353 10.1109/24.257816Google Scholar